| PART |
Description |
Maker |
| EDX5116ACSE-4C-E EDX5116ACSE-3A-E EDX5116ACSE-3B-E |
512M bits XDR DRAM
512M bits XDR?/a> DRAM
|
Elpida Memory
|
| EDE5116GBSA-5A-E EDE5104GBSA-4A-E EDE5116GBSA-4A-E |
512M bits DDR-II SDRAM 512M比特的DDR - II内存
512M bits DDR-II SDRAM 32M X 16 DDR DRAM, 0.6 ns, PBGA84
|
Elpida Memory, Inc.
|
| EDL5132CBMA-10-E |
512M bits Mobile RAM MCP 2 pcs of 256Mb components (16M words x 32 bits)
|
Elpida Memory, Inc.
|
| EDE5104ABSE EDE5104ABSE-5C-E EDE5108ABSE-5C-E EDE5 |
(EDE51xxABSE) 512M bits DDR2 SDRAM
512M bits DDR2 SDRAM 64M X 8 DDR DRAM, 0.5 ns, PBGA64
512M bits DDR2 SDRAM 128M X 4 DDR DRAM, 0.5 ns, PBGA64
|
Elpida Memory, Inc.
|
| EDD2508AKTA-5C EDD2508AKTA-5B |
256M bits DDR SDRAM (32M words x 8 bits, DDR400) 256M比特DDR SDRAM内存2M的字× 8位，支持DDR400
|
Elpida Memory, Inc.
|
| EBD26UC6AKSA-7B EBD26UC6AKSA EBD26UC6AKSA-6B EBD26 |
Single Pole Normally Open: 1-Form-A, 800V
256MB DDR SDRAM SO DIMM (32M words x 64 bits, 2 Banks)
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| IS42S32800B-7T IS42S32800B-6T IS42S32800B-6BI IS42 |
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM 8M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM 8M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
|
Integrated Silicon Solution, Inc.
|
| LC321664AJ LC321664AM LC321664AT-80 |
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode / Byte Write
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
Sanyo Electric Co.,Ltd.
|
| K4C89323AF-GCF5 K4C89323AF-GCF6 K4C89323AF-GCFB K4 |
2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
|
Samsung semiconductor
|
| EDS2516APSA-75 EDS2508APSA-75 EDS2508APSA-75L EDS2 |
256M bits SDRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
256M bits SDRAM 32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
|
http://
Elpida Memory, Inc.
|
